NTE75 Просмотр технического описания (PDF) - NTE Electronics

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NTE75

Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount)

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

DC Current Gain (Note 1)

Collector Saturation Voltage

Base Saturation Voltage

Base ON Voltage

AC Current Gain

Current Gain–Bandwidth Product

Output Capacitance

Delay Time

Rise Time

Storage Time

Fall Time

hFE

VCE(sat)

VBE(sat)

VBE(on)

hFE

fT

Cob

td

tr

ts

tf

VCE = 5V, IC = 50mA

VCE = 5V, IC = 1A

VCE = 5V, IC = 1A, TA = –65°C

VCE = 5V, IC = 5A

IC = 1A, IB = 100mA, Note 1

IC = 5A, IB = 500mA, Note 1

IC = 1A, IB = 100mA, Note 1

VCE = 2V, IC = 1A, Note 1

VCE = 5V, IC = 50mA, f = 1kHz

VCE = 10V, IC = 1A, f = 10MHz

VCE = 10V, IE = 0, f = 1MHz

VCC = 20V, IC = 1A,

IB1 = –IB2 = 100mA,

Pulse Width = 2µs,

Duty Cycle ≤ 2%,

Source Impedance = 50Ω

40 –

–

40 – 120

15 –

–

15 –

–

–

– 0.25 V

–

– 1.5 V

–

– 1.2 V

–

– 1.2 V

40 – 120

20 – 120 MHz

–

– 150 pF

–

– 60 ns

–

– 300 ns

–

– 1.7 µs

–

– 300 ns

Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.

Base

.190

(4.82)

Dia

.432

(10.95)

Emitter

.347 (8.82)

Dia

Collector/

Stud

.760

(19.3)

Max

.115 (2.92)

10–32 NF–2A

.370

(9.39)

.078

(1.97)

Max

.420

(10.66)

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