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производитель

NTE123A

NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Cont’d)

Base–Emitter Saturation Voltage

NTE123A

NTE159M

Small–Signal Characteristics

VBE(sat)

IC = 150mA, IB = 15mA, Note 1

IC = 500mA, IB = 50mA, Note 1

IC = 150mA, IB = 15mA, Note 1

IC = 500mA, IB = 50mA

0.6 – 1.2 V

–

– 2.0

V

–

– 1.3

V

–

– 2.6

V

Current Gain–Bandwidth Product

NTE123A

NTE159M

Output Capacitance

Input Capactiance

NTE123A

NTE159M

Input Impedance (NTE123A Only)

Voltage Feedback Ratio

(NTE123A Only)

Small–Signal Current Gain

(NTE123A Only)

Output Admittance (NTE123A Only)

Collector–Base Time Constant

(NTE123A Only)

Noise Figure (NTE123A Only)

fT

IC = 20mA VCE = 20V, f = 100MHz, 300 –

IC = 50mA Note 2

200 –

– MHz

– MHz

Cobo VCB = 10V, IE = 0, f = 100kHz

–

–

8

pF

Cibo

VBE = 0.5V IC = 0, f = 100kHz

–

– 25 pF

VBE = 2V

–

– 30 pF

hie IC = 1mA VCE = 10V, f = 1kHz

2.0 – 8.0 kΩ

IC = 10mA

hre IC = 1mA VCE = 10V, f = 1kHz

IC = 10mA

0.25 – 1.25 kΩ

–

–

8 x 10–4

–

–

4 x 10–4

hfe IC = 1mA VCE = 10V, f = 1kHz

50 – 300

IC = 10mA

75 – 375

hoe IC = 1mA VCE = 10V, f = 1kHz

5

– 35 µmhos

IC = 10mA

25 – 200 µmhos

rb′Cc

IE = 20mA, VCB = 20V, f = 31.8MHz –

– 150 ps

NF IC = 100µA, VCE = 10V, RS = 1kΩ,

f = 1kHz

–

–

4

dB

Real Part of Common–Emitter High

Re(hie) IC = 20mA, VCE = 20V, f = 300MHz

–

– 60

Ω

Frequency Input Impedance

(NTE123A Only)

Switching Characteristics

NTE123A

Delay Time

Rise Time

Storage Time

Fall Time

NTE159M

Turn–On Time

Delay Time

Rise Time

Turn–Off Time

Storage Time

Fall Time

td

VCC = 30V, VBE(off) = 500mV,

tr

IC = 150mA, IB1 =– 15mA

ts

VCC = 30V, IC = 150mA,

tf

IB1 = IB2 = 15mA

ton VCC = 30V, IC = 150mA,

td

IB1 = 15mA

tr

toff VCC = 6V, IC = 150mA,

ts

IB1 = IB2 = 15mA

tf

–

– 10

ns

–

– 25

ns

–

– 225 ns

–

– 60

ns

– 26 45 ns

–

6 10

ns

– 20 40 ns

– 70 100 ns

– 50 80 ns

– 20 30 ns

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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