Memory ICs
BA6129AF / BA6162 / BA6162F
BA6162 / F (unless otherwise noted, Ta = 25°C, VRRES = VCC = 5V, RRES = 10kΩ)
Parameter
No-load current dissipation
I / O voltage differential 1
Vo output voltage 1
Vo output voltage 2
Vo output voltage 3
Detection voltage
Detection hysteresis voltage
Reset output low level voltage
Reset leakage current
Reset operating limit voltage
CS output low level voltage
CS output high level voltage
CSB output low level voltage
CSB output high level voltage
Detection voltage temperature characteristic
Switching voltage
Switching hysteresis voltage
Switching voltage temperature characteristic
Backup current dissipation
I / O voltage differential 2
Vo output voltage 4
Vo output voltage 5
Vo output voltage 6
Reverse current
Symbol Min.
ICC
—
VSAT1
—
VO1
4.95
VO2
4.70
VO3
4.50
VS
4.00
VSH
—
VRESL
—
IRESH
—
VOPL
—
VCSL
—
VCSH
4.9
VCSBL
—
VCSBH Vo – 0.1
KVS – 0.05
VB
3.15
VBH
—
KVB – 0.05
ICCB
—
VSAT2
—
VO4
2.70
VO5
2.60
VO6 VCC – 0.5
IOR
—
Typ. Max.
—
2.0
0.03 0.05
4.97
—
4.90
—
4.86
—
4.20 4.40
100
—
—
0.4
—
0.1
0.8
1.2
—
0.1
—
—
—
0.1
—
—
— + 0.05
3.30 3.45
100
—
— + 0.05
—
0.5
0.20 0.03
2.80
—
2.67
—
—
—
—
0.1
Unit
mA
V
V
V
V
V
mV
V
µA
V
V
V
V
V
% / °C
V
mV
% / °C
µA
V
V
V
V
µA
Conditions
VCC = 5V, VBAT = 3V
VCC = 5V, VBAT = 3V, IO = – 1mA
VCC = 5V, VBAT = 3V, IO = – 1mA
VCC = 5V, VBAT = 3V, IO = – 15mA
VCC = 5V, VBAT = 3V, IO = – 30mA
VCC = H→L
VCC = L→H
VCC = 3.7V
VCC = 5V, VRRES = 7V
VCC = H→L, VRES Ϲ 0.4V
VCC = 3.7V, VBAT = 3V, ICS = + 1µA
VCC = 5V, VBAT = 3V, ICS = – 1µA
VCC = 5V, VBAT = 3V, ICSB = + 1µA
VCC = 3.7V, VBAT = 3V, ICSB = – 1µA
—
VCC = H→L, VBAT = 3V, RO = 200kΩ
VCC = L→H, VBAT = 3V, RO = 200kΩ
—
VCC = GND, VBAT = 3V
VCC = GND, VBAT = 3V, IO = – 1µA
VCC = GND, VBAT = 3V, IO = – 1µA
VCC = GND, VBAT = 3V, IO = – 100µA
IO = – 40mA
VCC = 5V, VBAT = GND
(Note) IO, ICS, and ICSB are + when flowing toward the pin and – when flowing away from the pin.
᭺ Not designed for radiation resistance.
4