CXG1081TN Просмотр технического описания (PDF) - Sony Semiconductor
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CXG1081TN Datasheet PDF : 8 Pages
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CXG1081TN
Electrical Characteristics
Conditions: VDD = 2.7V, VCTL (H) = 2.7V, VCTL (L) = 0V, fRF1 = 870MHz, fRF2 = 820MHz,
fLO = fRF – 130MHz, PLO = –15dBm, unless otherwise specified
(Ta = 25°C)
Item
Symbol
Path
Current
consumption
IDD
VDD1, VDD2
VDD3 → GND
Control
current
CTL → GND
ICTL
CTL → GND
Conversion
gain
GC
RFIN1 → IFOUT
RFIN2 → IFOUT
Noise figure NF
RFIN1 → IFOUT
RFIN2 → IFOUT
Input IP3
IIP3
RFIN1 → IFOUT
RFIN2 → IFOUT
LO to RF
leak level
LOIN → RFIN1
PLK
LOIN → RFIN2
VCTL
H
L
H
L
H
L
H
L
H
L
H
L
H
L
Min. Typ. Max. Unit Measurement condition
— 5.7 7.3 mA
When no signal
— 35 70
µA
–1
0
—
8 9.5 11.5
— –17 –12
dB
— –19 –14
When a small signal
8
10 11.5
— 4.6 6.5
dB
— 4.7 6.5
0 –2.5
0.5 3
PRF = –25dBm,
—
offset = 100kHz
dBm Conversion by the IM3
—
suppression ratio for
two-wave input
— –29 –23
fLO = 740MHz
dBm
— –29 –23
fLO = 690MHz
Note) The values shown above are the specified values on the Sony's recommended evaluation board.
–2–
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