Die Characteristics
DIE DIMENSIONS:
87 mils x 75 mils x 19 mils
2210µm x 1910µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
Metallization Mask Layout
-IN4
HA-4741
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
SUBSTRATE POTENTIAL (POWERED UP):
V-
TRANSISTOR COUNT:
72
PROCESS:
Junction Isolated Bipolar/JFET
HA-4741
+IN4 V- +IN3
-IN3
OUT4
OUT1
OUT3
OUT2
-IN1
+IN1 V+ +IN2
-IN2
6