BRY39 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BRY39 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
Programmable unijunction transistor/
Silicon controlled switch
Product specification
BRY39
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
IARM
IASM
dIA/dt
repetitive peak anode current
non-repetitive peak anode current
rate of rise of anode current
tp = 10 µs; δ = 0.01
tp = 10 µs; Tj = 150 °C
IA ≤ 2.5 A
−
2.5
A
−
3
A
−
20
A/µs
Notes
1. Provided the IE rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
VALUE
450
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
ICEO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
INDIVIDUAL NPN TRANSISTOR
ICER
collector cut-off current
IEBO
VCEsat
VBEsat
hFE
Cc
Ce
fT
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
collector capacitance
emitter capacitance
transition frequency
COMBINED DEVICE
VAK
forward on-state voltage
IH
holding current
IB = 0; VCE = −70 V; Tj = 150 °C
−
IC = 0; VEB = −70 V; Tj = 150 °C
−
IE = 1 mA; VCE = −5 V
3
VCE = 70 V; RBE = 10 kΩ
−
VCE = 70 V; RBE = 10 kΩ; Tj = 150 °C −
IC = 0; VEB = 5 V; Tj = 150 °C
−
IC = 10 mA; IB = 1 mA
−
IC = 10 mA; IB = 1 mA
−
IC = 10 mA; VCE = 2 V
50
IE = ie = 0; VCB = 20 V
−
IC = ic = 0; VEB = 1 V; f = 1 MHz
−
IC = 10 mA; VCE = 2 V; f = 100 MHz 100
RKG-K = 10 kΩ
IA = 50 mA; IAG = 0
−
IA = 50 mA; IAG = 0; Tj = −55 °C −
IA = 1 mA; IAG = 10 mA
−
VBB = −2 V; IAG = 10 mA;
−
RKG-K = 10 kΩ; see Fig.14
MAX. UNIT
−10
µA
−10
µA
15
100
nA
10
µA
10
µA
0.5
V
0.9
V
−
5
pF
25
pF
−
MHz
1.4
V
1.9
V
1.2
V
1
mA
1997 Jul 24
4
Share Link: 