BCW72,215 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

BCW72,215

NPN general purpose transistors

NXP Semiconductors. 

NXP Semiconductors

NPN general purpose transistors

Product data sheet

BCW71; BCW72

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

hFE

VCEsat

VBEsat

emitter cut-off current

DC current gain

BCW71

BCW72

DC current gain

BCW71

BCW72

collector-emitter saturation

voltage

base-emitter saturation voltage

VBE

base-emitter voltage

Cc

collector capacitance

fT

transition frequency

F

noise figure

CONDITIONS

IE = 0; VCB = 20 V

IE = 0; VCB = 20 V; Tj = 100 °C

IC = 0; VEB = 5 V

IC = 10 μA; VCE = 5 V

IC = 2 mA; VCE = 5 V

IC = 10 mA; IB = 0.5 mA

IC = 50 mA; IB = 2.5 mA

IC = 10 mA; IB = 0.5 mA

IC = 50 mA; IB = 2.5 mA

IC = 2 mA; VCE = 5 V

IE = Ie = 0; VCB = 10 V; f = 1 MHz

IC = 10 mA; VCE = 5 V; f = 100 MHz

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

MIN.

−

−

−

TYP.

−

−

−

MAX. UNIT

100 nA

10

μA

100 μA

−

90

−

−

150 −

110 −

220

200 −

450

−

120 250 mV

−

210 −

mV

−

750 −

mV

−

850 −

mV

550 −

700 mV

−

2.5 −

pF

100 −

−

MHz

−

−

10

dB

1999 Apr 19

3

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