2SB1232 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SB1232

(2SB1232/2SD1842): PNP Epitaxial Planar Silicon Transistor / NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

2SB1232/2SD1842

Parameter

Symbol

Conditions

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)1mA, IE=0

IC=(–)5mA, RBE=∞

IC=(–)1mA, IC=0

* : For the hFE1 of the 2SB1232/2SD1842, specify at least two ranks in principle.

50 P 100 70 Q 140

Ratings

Unit

min typ max

(–)110

V

(–)100

V

(–)6

V

No.3261–2/4

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