MPSA64 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

MPSA64

PNP Darlington transistor

Philips Electronics 

Philips Semiconductors

PNP Darlington transistor

Product specification

MPSA64

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

250

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. MAX. UNIT

ICBO

IEBO

hFE

VCEsat

VBEsat

VBEon

fT

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

base-emitter saturation voltage

base-emitter on-state voltage

transition frequency

IE = 0; VCB = −30 V

IC = 0; VEB = −10 V

IC = −10 mA; VCE = −5 V; see Fig.2

IC = −100 mA; VCE = −5 V; see Fig.2

IC = −100 mA; IB = −0.1 mA

IC = −100 mA; IB = −0.1 mA

IC = −100 mA; VCE = −5 V

IC = −100 mA; VCE = −5 V; f = 100 MHz

−

−

10 000

20 000

−

−

−

125

−100

−100

−

−

−1.5

−1.5

−2

−

nA

nA

V

V

V

MHz

100000

handbook, full pagewidth

hFE

80000

60000

40000

20000

0

−1

VCE = −2 V.

1999 Apr 27

MGD836

−10

−102

−103

IC (mA)

Fig.2 DC current gain; typical values.

3

Share Link: