4N25GV Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

4N25GV

Optocoupler with Phototransistor Output

Vishay Semiconductors 

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Output (Detector)

Test Conditions

Symbol

Value

Unit

Isi

130

mA

Parameters

Power dissipation

Coupler

Test Conditions

Symbol

Value

Unit

Tamb ≤ 25°C

Psi

265

mW

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

Value

Unit

VIOTM

6

kV

Tsi

150

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol Min. Typ. Max.

Unit

Partial discharge test voltage – 100%, ttest = 1 s

Vpd

1.6

kV

Routine test

Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM

6

kV

Lot test (sample test)

Insulation resistance

(see figure 2)

VIO = 500 V

VIO = 500 V,

Vpd

1.3

RIO

1012

RIO

1011

kV

W

W

Tamb = 100°C

VIO = 500 V,

RIO

109

W

Tamb = 150°C

(construction test only)

VIOTM

300

V

250

Phototransistor

Psi ( mW )

200

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VPd

150

VIOWM

VIORM

100

50

0

0

94 9182

IR-Diode

Isi ( mA )

25 50 75 100 125 150

Tsi – Safety Temperature ( °C )

Figure 1. Derating diagram

0

t1

13930

tTr = 60 s

t3 ttest t4

t2 tstres

t

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Rev. A4, 11–Jan–99

89

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