Descriptions
The WNMD2181 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2181 is available in CSP-6L package. Standard Product WNMD2181 is Pb-free and Halogen-free.

FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Common-drain type
● Small package CSP-6L

~Applications
● Lithium-Ion battery protection circuit