WFP70N06T Datasheet - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
WFP70N06T
Other PDF
no available.
PDF
page
7 Pages
File Size
454.6 kB
MFG CO.
Shenzhen Winsemi Microelectronics Co., Ltd
General Description
This Power MOSFET is produced using Winsemis advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.
Features
◾ 68A,60V, RDS(on)(Max18mΩ)@VGS=10V
◾ Ultra-low Gate charge(Typical 20nC)
◾ Improved dv/dt capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(175℃ )
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