[Winsemi Microelectronics Co., Ltd]

General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portable and,battery operated products.

FEATUREs
68A,60V, RDS(on)(Max18mΩ)@VGS=10V
Ultra-low Gate charge(Typical 20nC)
Improved dv/dt capability
100% Avalanche Tested
Maximum Junction Temperature Range(175℃)