General Description

This Power MOSFET is produce d using Semiwells adva nced planar stripe,DMOS technology.Th is latest technology has been especially designe d to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portableand,battery operatedproducts.

FEATUREs
■ 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 70nC)
■ Low Crss (Typical 160pF)
■ Improved dv/dt capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(175℃)