General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FEATUREs
■RDS(on)(Max 0.022 Ω)@VGS=10V
■Gate Charge (Typical 32nC)
■Improved dv/dt Capability, High Ruggedness
■100% Avalanche Tested
■Maximum Junction Temperature Range (175°C)