Part Name
VSMB3940X01-GS18
MFG CO.
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Vishay Semiconductors
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DESCRIPTION
VSMB3940X01 is an infrared, 940 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering acc. J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
Part Name
Description
PDF
MFG CO.
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors