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VSLB3948 Datasheet - Vishay Semiconductors

VSLB3948 image

Part Name
VSLB3948

Other PDF
  no available.

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page
5 Pages

File Size
100 kB

MFG CO.
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSLB3948 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.


FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• High speed
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity: ϕ = ± 22°
• Peak wavelength: λp = 940 nm
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• Infrared remote control units


Part Name
Description
PDF
MFG CO.
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors

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