DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.

FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Lead (Pb)-free component in accordance with
   RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared remote control units