Description
The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-of-the-art technology to meet standard PC100 or high speed PC133 requirement. Four internal independent banks greatly increase the performance efficiency. It is packaged in JEDEC standard pinout and standard plastic 54-pin TSOP package.

FEATUREs
• Single 3.3V ( ) power supply
• High speed clock cycle time : 7.5ns/10ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A13 & A14 (Bank select)
• Each Banks can operate simultaneously and independently
• I/O level : LVTTL compatible
• Random column access in every cycle
• x4, x8, x16 organization
• Input/Output controlled by DQM, LDQM, UDQM
• 8,192 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
±0.3V