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UPD43256B-LL Datasheet - NEC => Renesas Technology

UPD43256B-LL image

Part Name
UPD43256B-LL

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page
24 Pages

File Size
138.1 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

Description
The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations. The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).
   
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Wide voltage range (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• 2 V data retention
• OE input for easy application
   

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Part Name
Description
PDF
MFG CO.
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
NEC => Renesas Technology
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
NEC => Renesas Technology
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
NEC => Renesas Technology
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 85ns
NEC => Renesas Technology
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
NEC => Renesas Technology
CMOS STATIC RAM 256K (32K x 8-BIT)
Integrated Device Technology
CMOS STATIC RAM 256K (32K x 8-BIT)
Integrated Device Technology
CMOS Static RAM 256K (32K x 8-Bit)
Integrated Device Technology
CMOS STATIC RAM 256K (32K x 8-BIT)
Integrated Device Technology
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM ( Rev : 1999 )
MITSUBISHI ELECTRIC

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