DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.

FEATURES
• Low on-resistance
   RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
   RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 730 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)