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TPC8109 Datasheet - Toshiba

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Part Name
TPC8109

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7 Pages

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235 kB

MFG CO.
Toshiba
Toshiba Toshiba

Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 19 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

 

Part Name
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba

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