datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Toshiba  >>> TPC8108 PDF

TPC8108 Datasheet - Toshiba

TPC8108 image

Part Name
TPC8108

Other PDF
  no available.

PDF
DOWNLOAD     

page
7 Pages

File Size
340.8 kB

MFG CO.
Toshiba
Toshiba Toshiba

Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications

•  Small footprint due to small and thin package
•  Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
•  High forward transfer admittance: |Yfs| = 24 S (typ.)
•  Low leakage current: IDSS = −10 µA (max) (VDS= −30 V)
•  Enhancement-mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −1mA)

Page Link's: 1  2  3  4  5  6  7 
 

Part Name
Description
PDF
MFG CO.
Silicon P Channel MOS Type (U-MOSIII) Field Effect Transistor
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2014 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSIII) ( Rev : Old_V )
Toshiba

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]