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TO-220 Datasheet - Kersemi Electronic Co., Ltd.

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Part Name
TO-220

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9 Pages

File Size
1.3 MB

MFG CO.
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features
• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Page Link's: 1  2  3  4  5  6  7  8  9 
 

Part Name
Description
PDF
MFG CO.
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Semihow
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET ( Rev : 2008 )
Fairchild Semiconductor
400V N-Channel MOSFET ( Rev : 2006 )
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor
400V N-Channel MOSFET
Fairchild Semiconductor

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