FEATURES
■ LOW INTERMODULATION DISTORTION
        IM3=-45 dBc at Pout= 28.0dBm
        Single Carrier Level
■ HIGH POWER P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz
■ HIGH GAIN G1dB=5.0 dB at 14.0 GHz to 14.5 GHz
■ BROAD BAND INTERNALLY MATCHED FET
■ HERMETICALLY SEALED PACKAGE