DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.026Ω (@4.5V)
■ TYPICAL RDS(on) = 0.030Ω (@2.5V)
■ ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS
■ BATTERY SAFETY UNIT IN NOMADIC EQUIPMENT
■ DC-DC CONVERTERS
■ POWER MANAGEMENT IN PORTABLE/ DESKTOP PCS