DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
General Features
■ TYPICAL RDS(on) = 0.0047 Ω
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED