STF6N65K3 Datasheet - STMicroelectronics
Part Name
STF6N65K3
Other PDF
no available.
PDF
page
16 Pages
File Size
898.7 kB
MFG CO.
STMicroelectronics
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
PDF
MFG CO.
N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP and I²PAKFP packages ( Rev : 2016 )
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N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
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N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages
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N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package
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N-channel 1000 V, 5.4 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in DPAK and TO-220FP packages ( Rev : 2018 )
STMicroelectronics
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