MFG CO.
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STMicroelectronics
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DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
■ TYPICAL RDS(on) = 0.7Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES
Part Name
Description
PDF
MFG CO.
500V,8A N-Channel MOSFET
Alpha and Omega Semiconductor
500V, 8A N-Channel MOSFET
Alpha and Omega Semiconductor
N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh™II MOSFET
STMicroelectronics
N-CHANNEL 500V - PowerMesh II MOSFET
STMicroelectronics
8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET
Unisonic Technologies
8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET
Unisonic Technologies
MOSFET N-CH 500V 8A TO220SIS
Toshiba
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
Intersil
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
Intersil
N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET
STMicroelectronics