General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

FEATUREs
• 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• 100% avalanche tested
• Improved dv/dt capability
• Gate-Source Voltage ± 50V guaranteed