Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

 • 75% lower Eoff compared to previous generation combined with low conduction losses
 • Short circuit withstand time – 10 s
 • Designed for:
    - Motor controls
    - Inverter
 • NPT-Technology for 600V applications offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
 • Very soft, fast recovery anti-parallel Emitter Controlled
    Diode
 • Pb-free lead plating; RoHS compliant
 • Qualified according to JEDEC1 for target applications
 • Complete product spectrum and PSpice Models : //www.infineon.com/igbt/