FEATURES:
• Rugged Construction with Poly Silicon Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy
   Paralleling
• Hermetically Sealed
• Replaces: IRF9140 Types
• TX, TXV, and Space Level Screening Available.
   Consult Factory.