General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half
bridge.

FEATUREs
10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V
Ultra-low Gate Charge(34nC)
Fast Switching Capability
100%Avalanche Tested
Improved dv/dt capability