SB065C040-3-W-AG Datasheet - Transys Electronics Limited
Part Name
SB065C040-3-W-AG
Other PDF
PDF
page
1 Pages
File Size
151.7 kB
MFG CO.
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Part Name
Description
PDF
MFG CO.
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
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