RT3C66M Datasheet - Isahaya Electronics
Part Name
RT3C66M
Other PDF
no available.
PDF
page
5 Pages
File Size
137.3 kB
MFG CO.
Isahaya Electronics
DESCRIPTION
RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application.
FEATURE
● High Vceo Vceo=160V
● Good two elements characteristics
hFE1/hFE2=1.0 typ
｜ VBE1-VBE2｜ =2mV typ
APPLICATION
For differential amplify application.
Part Name
Description
PDF
MFG CO.
Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type
Isahaya Electronics
DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
Isahaya Electronics
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ( Rev : 2013 )
Isahaya Electronics
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ( Rev : 2013 )
Isahaya Electronics
Share Link: