Description
The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier chip utilizing Raytheon’s advanced 0.15 µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.

FEATUREs
◆ 24 dB small signal gain (typ.)
◆ 29 dBm saturated power output (typ.)
◆ Circuit contains individual vias
◆ Chip size 4.28mm x 2.90 mm