RJP30 Datasheet - Renesas Electronics
Part Name
RJP30
Other PDF
no available.
PDF
page
7 Pages
File Size
83.1 kB
MFG CO.
Renesas Electronics
Features
• Trench gate and thin wafer technology (G6H-II series)
• Low collector to emitter saturation voltage VCE(sat) = 1.1V typ
• High speed switching tr = 90 ns typ, tf = 250 ns typ
• Low leak current ICES = 1µA max
• Isolated package TO-220FL
Part Name
Description
PDF
MFG CO.
Silicon N Channel IGBT High Speed Power Switching
( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching ( Rev : 2010 )
Renesas Electronics
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