MFG CO.
Harris Semiconductor
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approach ing those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
Part Name
Description
PDF
MFG CO.
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
Intersil
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs
Intersil
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET
Intersil
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET
Intersil
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
Intersil
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Intersil
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET
Intersil
60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs
Fairchild Semiconductor