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RF5122 Datasheet - RF Micro Devices

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Part Name
RF5122

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12 Pages

File Size
260.5 kB

MFG CO.
RFMD
RF Micro Devices RFMD

Product Description
The RF5122 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with a backside ground. The RF5122 is designed to maintain linearity over a wide range of supply voltages and power outputs. The RF5122 also has built-in power detector and incorporates the input, interstage, and output matching components internally which reduces the component count used externally and makes it easier to incorporate on any design.


FEATUREs
◾ Single Power Supply 3.0V to 3.6V
◾ 24dB Minimum Gain
◾ Input and Output Matched to 50Ω
◾ 2400MHz to 2500MHz Frequency Range
◾ +18dBm @ <2.5% typ EVM,120mA @ 3.3VCC


APPLICATIONs
◾ IEEE802.11b/g/n WLAN Applications
◾ 2.5GHz ISM Band Applications
◾ Commercial and Consumer Systems
◾ Portable Battery-Powered Equipment
 Spread-Spectrum and MMDS Systems

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