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RF3105 Datasheet - RF Micro Devices

RF3105 image

Part Name
RF3105

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page
6 Pages

File Size
122 kB

MFG CO.
RFMD
RF Micro Devices RFMD

Product Description
The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3105 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.


FEATUREs
• Input/Output Internally Matched @ 50Ω
• Single 3V Supply
• 29dBm Linear Output Power
• 28dB Linear Gain
• 35% Linear Efficiency

Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems

Page Link's: 1  2  3  4  5  6 

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