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RD06HVF1(2010) Datasheet - MITSUBISHI ELECTRIC

RD06HVF1 image

Part Name
RD06HVF1

Other PDF
  2006   2008   lastest PDF  

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page
9 Pages

File Size
340.4 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


FEATURES
   High power gain:
      Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


APPLICATION
   For output stage of high power amplifiers in VHF band mobile radio sets.


Part Name
Description
PDF
MFG CO.
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2006 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2010 )
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
MITSUBISHI ELECTRIC

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