Description
The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

• 10 Watts, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated