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PSMN011-30YL Datasheet - Nexperia B.V. All rights reserved

PSMN011-30YL image

Part Name
PSMN011-30YL

Other PDF
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page
15 Pages

File Size
461.7 kB

MFG CO.
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.


FEATUREs and benefits
◾ High efficiency due to low switching
   and conduction losses
◾ Suitable for logic level gate drive
   sources


APPLICATIONs
◾ Class-D amplifiers
◾ DC-to-DC converters
◾ Motor control
◾ Server power supplies


Part Name
Description
PDF
MFG CO.
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
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N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
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N-channel 30 V 2 mΩ logic level MOSFET in LFPAK ( Rev : 2021 )
Nexperia B.V. All rights reserved
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK ( Rev : 2010 )
NXP Semiconductors.
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Nexperia B.V. All rights reserved
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
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N-channel TrenchMOS logic level FET
NXP Semiconductors.

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