General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

FEATUREs and benefits
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified

APPLICATIONs
■ Electronic ballasts
■ LED driver for LED chain module
■ LCD backlighting
■ Automotive motor management
■ Flyback converters
■ Hook switch for wired telecom
■ Switch Mode Power Supply (SMPS)