VDSS = 150 V
ID = 23 A
RDS(ON) ≤ 90 mΩ

GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB23NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.

FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance