GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance