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PHD20N06T Datasheet - Nexperia B.V. All rights reserved

PHD20N06T image

Part Name
PHD20N06T

Other PDF
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page
12 Pages

File Size
797.3 kB

MFG CO.
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics


APPLICATIONs
■ DC-to-DC convertors
■ General purpose switching
■ Switched-mode power supplies


Part Name
Description
PDF
MFG CO.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
Philips Electronics
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET ( Rev : 2011 )
NXP Semiconductors.

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