datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Paradigm Technology  >>> PDM31096 PDF

PDM31096 Datasheet - Paradigm Technology

PDM31096 image

Part Name
PDM31096

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
189.2 kB

MFG CO.
Paradigm-Technology
Paradigm Technology Paradigm-Technology

Description
The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is accomplished when the write enable (WE) and chip enable CE inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.


FEATUREs
□ High-speed access times
    Com’l: 8, 10, 12, 15, and 20 ns
    Ind’l.: 12, 15 and 20 ns
□ Low power operation
    - PDM31096SA
        Active: 300 mA (Max)
        Standby: 25mW
□ Single +3.3V (±0.3V) power supply
□ TTL-compatible inputs and outputs
□ Packages
    Plastic SOJ (400 mil) - SO
    Plastic TSOP (II) - T

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
PDF
MFG CO.
3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) ( Rev : 2013 )
Integrated Device Technology
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
Integrated Device Technology
3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)
Integrated Device Technology
3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)
Integrated Device Technology
4 Megabit 3.3V Static RAM 1Mx 4-Bit
Paradigm Technology
4 Mbit (512K x 8) Static RAM ( Rev : 2010 )
Cypress Semiconductor
4-Mbit (512K x 8) Static RAM ( Rev : 2006 )
Cypress Semiconductor
4-Mbit (512K x 8) Static RAM ( Rev : 2007 )
Cypress Semiconductor
4 Mbit (512K x 8) Static RAM
Cypress Semiconductor
4-Mbit (512K x 8) Static RAM ( Rev : 2010 )
Cypress Semiconductor

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]