MFG CO.
![NXP](/logo/NXP.png)
NXP Semiconductors.
![NXP](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
APPLICATIONs
■ High voltage DC-to-DC conversion
■ High voltage MOSFET gate driving
■ High voltage motor control
■ High voltage power switches (e.g. motors, fans)
■ Automotive applications
Part Name
Description
PDF
MFG CO.
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