General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

FEATUREs and benefits
■ Low noise, high breakdown RF transistor
■ AEC-Q101 qualified
■ Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
■ Maximum stable gain 22 dB at 900 MHz
■ 11 GHz fT silicon technology

APPLICATIONs
■ Applications requiring high supply voltages and high breakdown voltages
■ Broadband amplifiers up to 2 GHz
■ Low noise amplifiers for ISM applications
■ ISM band oscillators